Properties of metalorganic chemical vapor deposited tantalum nitride thin films

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Sun, SC	en_US
dc.contributor.author	Tsai, MH	en_US
dc.contributor.author	Tsai, CE	en_US
dc.contributor.author	Chiu, HT	en_US
dc.date.accessioned	2014-12-08T15:27:44Z	-
dc.date.available	2014-12-08T15:27:44Z	-
dc.date.issued	1995	en_US
dc.identifier.isbn	7-5053-3285-6	en_US
dc.identifier.uri	http://hdl.handle.net/11536/20000	-
dc.language.iso	en_US	en_US
dc.title	Properties of metalorganic chemical vapor deposited tantalum nitride thin films	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	PROCEEDINGS OF THE FOURTH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY	en_US
dc.citation.spage	A547	en_US
dc.citation.epage	A549	en_US
dc.contributor.department	奈米中心	zh_TW
dc.contributor.department	Nano Facility Center	en_US
dc.identifier.wosnumber	WOS:A1995BF21N00159	-
顯示於類別：	會議論文