1. You are Here：

Full metadata record
DC FieldValueLanguage
dc.contributor.authorTai, YHen_US
dc.contributor.authorSu, FCen_US
dc.contributor.authorFeng, MSen_US
dc.contributor.authorCheng, HCen_US
dc.date.accessioned2014-12-08T15:27:44Z-
dc.date.available2014-12-08T15:27:44Z-
dc.date.issued1995en_US
dc.identifier.isbn7-5053-3285-6en_US
dc.identifier.urihttp://hdl.handle.net/11536/20001-
dc.language.isoen_USen_US
dc.titleProcess-related instability mechanisms for the hydrogenated amorphous silicon thin film transistorsen_US
dc.typeProceedings Paperen_US
dc.identifier.journalPROCEEDINGS OF THE FOURTH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGYen_US
dc.citation.spageA730en_US
dc.citation.epageA732en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1995BF21N00218-
Appears in Collections:Conferences Paper


Related Contents
Loading...