| Title: | Process-related instability mechanisms for the hydrogenated amorphous silicon thin film transistors |
| Authors: | Tai, YH Su, FC Feng, MS Cheng, HC 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
| Issue Date: | 1995 |
| URI: | http://hdl.handle.net/11536/20001 |
| ISBN: | 7-5053-3285-6 |
| Journal: | PROCEEDINGS OF THE FOURTH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY |
| Begin Page: | A730 |
| End Page: | A732 |
| Appears in Collections: | Conferences Paper |
- 非晶矽薄膜電晶體特性及可靠度之研究 / 戴亞翔;Tai ,Ya-Hsiang;鄭晃忠;Huang-Chung Cheng
- INSTABILITY MECHANISMS FOR THE HYDROGENATED AMORPHOUS-SILICON THIN-FILM TRANSISTORS WITH NEGATIVE AND POSITIVE BIAS STRESSES ON THE GATE ELECTRODES / TAI, YH;TSAI, JW;CHENG, HC;SU, FC
- The instability characteristics of amorphous silicon thin film transistors with various interfacial and bulk defect states / Cheng, HC;Tsai, JW;Huang, CY;Luo, FC;Tuan, HC
- ANOMALOUS BIAS-STRESS-INDUCED UNSTABLE PHENOMENA OF HYDROGENATED AMORPHOUS-SILICON THIN-FILM TRANSISTORS / TAI, YH;TSAI, JW;CHENG, HC;SU, FC
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