Gate oxynitride grown in N2O and annealed in no using rapid thermal processing

Title:	Gate oxynitride grown in N2O and annealed in no using rapid thermal processing
Authors:	Sun, SC Chen, CH Lou, JC Yen, LW Lin, CJ 電機學院 College of Electrical and Computer Engineering
Issue Date:	1995
URI:	http://hdl.handle.net/11536/20005
ISBN:	1-55899-290-1
ISSN:	0272-9172
Journal:	RAPID THERMAL AND INTEGRATED PROCESSING IV
Volume:	387
Begin Page:	241
End Page:	246
Appears in Collections:	Conferences Paper