Gate oxynitride grown in N2O and annealed in no using rapid thermal processing

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Sun, SC	en_US
dc.contributor.author	Chen, CH	en_US
dc.contributor.author	Lou, JC	en_US
dc.contributor.author	Yen, LW	en_US
dc.contributor.author	Lin, CJ	en_US
dc.date.accessioned	2014-12-08T15:27:45Z	-
dc.date.available	2014-12-08T15:27:45Z	-
dc.date.issued	1995	en_US
dc.identifier.isbn	1-55899-290-1	en_US
dc.identifier.issn	0272-9172	en_US
dc.identifier.uri	http://hdl.handle.net/11536/20005	-
dc.language.iso	en_US	en_US
dc.title	Gate oxynitride grown in N2O and annealed in no using rapid thermal processing	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	RAPID THERMAL AND INTEGRATED PROCESSING IV	en_US
dc.citation.volume	387	en_US
dc.citation.spage	241	en_US
dc.citation.epage	246	en_US
dc.contributor.department	電機學院	zh_TW
dc.contributor.department	College of Electrical and Computer Engineering	en_US
dc.identifier.wosnumber	WOS:A1995BE31M00029	-
顯示於類別：	會議論文