Performance of MOCVD tantalum nitride diffusion barrier for copper metallization

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DC 欄位	值	語言
dc.contributor.author	Sun, SC	en_US
dc.contributor.author	Tsai, MH	en_US
dc.contributor.author	Tsai, CE	en_US
dc.contributor.author	Chiu, HT	en_US
dc.date.accessioned	2014-12-08T15:27:48Z	-
dc.date.available	2014-12-08T15:27:48Z	-
dc.date.issued	1995	en_US
dc.identifier.isbn	0-7803-2602-4	en_US
dc.identifier.uri	http://hdl.handle.net/11536/20046	-
dc.identifier.uri	http://dx.doi.org/10.1109/VLSIT.1995.520844	en_US
dc.language.iso	en_US	en_US
dc.title	Performance of MOCVD tantalum nitride diffusion barrier for copper metallization	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1109/VLSIT.1995.520844	en_US
dc.identifier.journal	1995 SYMPOSIUM ON VLSI TECHNOLOGY: DIGEST OF TECHNICAL PAPERS	en_US
dc.citation.spage	29	en_US
dc.citation.epage	30	en_US
dc.contributor.department	奈米中心	zh_TW
dc.contributor.department	Nano Facility Center	en_US
dc.identifier.wosnumber	WOS:A1995BE44J00013	-
顯示於類別：	會議論文

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