THE SELECTIVITY OF REACTIVE ION ETCH OF GA0.51IN0.49P/GAAS

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	WU, JW	en_US
dc.contributor.author	CHAN, SH	en_US
dc.contributor.author	LIN, KC	en_US
dc.contributor.author	CHANG, CY	en_US
dc.contributor.author	CHANG, EY	en_US
dc.date.accessioned	2014-12-08T15:27:49Z	-
dc.date.available	2014-12-08T15:27:49Z	-
dc.date.issued	1994	en_US
dc.identifier.isbn	1-55899-237-5	en_US
dc.identifier.issn	0272-9172	en_US
dc.identifier.uri	http://hdl.handle.net/11536/20059	-
dc.language.iso	en_US	en_US
dc.title	THE SELECTIVITY OF REACTIVE ION ETCH OF GA0.51IN0.49P/GAAS	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	ADVANCED METALLIZATION FOR DEVICES AND CIRCUITS - SCIENCE, TECHNOLOGY AND MANUFACTURABILITY	en_US
dc.citation.volume	337	en_US
dc.citation.spage	755	en_US
dc.citation.epage	760	en_US
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
dc.identifier.wosnumber	WOS:A1994BB59J00099	-
顯示於類別：	會議論文