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dc.contributor.authorWU, JWen_US
dc.contributor.authorCHAN, SHen_US
dc.contributor.authorLIN, KCen_US
dc.contributor.authorCHANG, CYen_US
dc.contributor.authorCHANG, EYen_US
dc.date.accessioned2014-12-08T15:27:49Z-
dc.date.available2014-12-08T15:27:49Z-
dc.date.issued1994en_US
dc.identifier.isbn1-55899-237-5en_US
dc.identifier.issn0272-9172en_US
dc.identifier.urihttp://hdl.handle.net/11536/20059-
dc.language.isoen_USen_US
dc.titleTHE SELECTIVITY OF REACTIVE ION ETCH OF GA0.51IN0.49P/GAASen_US
dc.typeProceedings Paperen_US
dc.identifier.journalADVANCED METALLIZATION FOR DEVICES AND CIRCUITS - SCIENCE, TECHNOLOGY AND MANUFACTURABILITYen_US
dc.citation.volume337en_US
dc.citation.spage755en_US
dc.citation.epage760en_US
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
dc.identifier.wosnumberWOS:A1994BB59J00099-
Appears in Collections:Conferences Paper


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