統計資料
總造訪次數
| 檢視 | |
|---|---|
| Investigation for coexistence of dual resistive switching characteristics in DyMn(2)O(5) memory devices | 106 |
本月總瀏覽
檔案下載
| 檢視 |
|---|
國家瀏覽排行
| 檢視 | |
|---|---|
| 中國 | 97 |
| 美國 | 6 |
縣市瀏覽排行
| 檢視 | |
|---|---|
| Shenzhen | 96 |
| Menlo Park | 4 |
| Kensington | 2 |
| Beijing | 1 |
| 檢視 | |
|---|---|
| Investigation for coexistence of dual resistive switching characteristics in DyMn(2)O(5) memory devices | 106 |
| 檢視 |
|---|
| 檢視 | |
|---|---|
| 中國 | 97 |
| 美國 | 6 |
| 檢視 | |
|---|---|
| Shenzhen | 96 |
| Menlo Park | 4 |
| Kensington | 2 |
| Beijing | 1 |