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dc.contributor.authorWANG, CKen_US
dc.contributor.authorYING, TLen_US
dc.contributor.authorWEI, CSen_US
dc.contributor.authorLIU, LMen_US
dc.contributor.authorCHENG, HCen_US
dc.contributor.authorLIN, MSen_US
dc.date.accessioned2014-12-08T15:27:52Z-
dc.date.available2014-12-08T15:27:52Z-
dc.date.issued1994en_US
dc.identifier.isbn0-8194-1668-1en_US
dc.identifier.urihttp://hdl.handle.net/11536/20116-
dc.identifier.urihttp://dx.doi.org/10.1117/12.186067en_US
dc.language.isoen_USen_US
dc.subjectPE-SINen_US
dc.subjectUV-TRANSMITTANCEen_US
dc.subjectEPROMen_US
dc.titleCHARACTERIZATION OF A HIGH-QUALITY AND UV-TRANSPARENT PECVD SILICON-NITRIDE FILM FOR NONVOLATILE MEMORY APPLICATIONSen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1117/12.186067en_US
dc.identifier.journalMICROELECTRONICS TECHNOLOGY AND PROCESS INTEGRATIONen_US
dc.citation.volume2335en_US
dc.citation.spage282en_US
dc.citation.epage290en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1994BB55A00030-
Appears in Collections:Conferences Paper


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