CHARACTERIZATION OF A HIGH-QUALITY AND UV-TRANSPARENT PECVD SILICON-NITRIDE FILM FOR NONVOLATILE MEMORY APPLICATIONS

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DC 欄位	值	語言
dc.contributor.author	WANG, CK	en_US
dc.contributor.author	YING, TL	en_US
dc.contributor.author	WEI, CS	en_US
dc.contributor.author	LIU, LM	en_US
dc.contributor.author	CHENG, HC	en_US
dc.contributor.author	LIN, MS	en_US
dc.date.accessioned	2014-12-08T15:27:52Z	-
dc.date.available	2014-12-08T15:27:52Z	-
dc.date.issued	1994	en_US
dc.identifier.isbn	0-8194-1668-1	en_US
dc.identifier.uri	http://hdl.handle.net/11536/20116	-
dc.identifier.uri	http://dx.doi.org/10.1117/12.186067	en_US
dc.language.iso	en_US	en_US
dc.subject	PE-SIN	en_US
dc.subject	UV-TRANSMITTANCE	en_US
dc.subject	EPROM	en_US
dc.title	CHARACTERIZATION OF A HIGH-QUALITY AND UV-TRANSPARENT PECVD SILICON-NITRIDE FILM FOR NONVOLATILE MEMORY APPLICATIONS	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1117/12.186067	en_US
dc.identifier.journal	MICROELECTRONICS TECHNOLOGY AND PROCESS INTEGRATION	en_US
dc.citation.volume	2335	en_US
dc.citation.spage	282	en_US
dc.citation.epage	290	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1994BB55A00030	-
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