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dc.contributor.authorSUN, SCen_US
dc.contributor.authorWANG, LSen_US
dc.contributor.authorYEH, FLen_US
dc.contributor.authorLAI, TSen_US
dc.contributor.authorLIN, YHen_US
dc.date.accessioned2014-12-08T15:27:53Z-
dc.date.available2014-12-08T15:27:53Z-
dc.date.issued1994en_US
dc.identifier.isbn1-55899-242-1en_US
dc.identifier.issn0272-9172en_US
dc.identifier.urihttp://hdl.handle.net/11536/20140-
dc.language.isoen_USen_US
dc.titleRAPID THERMAL-OXIDATION OF LIGHTLY DOPED SILICON IN N2Oen_US
dc.typeProceedings Paperen_US
dc.identifier.journalRAPID THERMAL AND INTEGRATED PROCESSING IIIen_US
dc.citation.volume342en_US
dc.citation.spage181en_US
dc.citation.epage186en_US
dc.contributor.department奈米中心zh_TW
dc.contributor.departmentNano Facility Centeren_US
dc.identifier.wosnumberWOS:A1994BB24P00025-
顯示於類別:會議論文