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dc.contributor.authorWANG, CLen_US
dc.contributor.authorKUO, JCen_US
dc.contributor.authorCHANG, CSen_US
dc.contributor.authorPAN, CLen_US
dc.date.accessioned2014-12-08T15:03:30Z-
dc.date.available2014-12-08T15:03:30Z-
dc.date.issued1995-03-01en_US
dc.identifier.issn0018-9197en_US
dc.identifier.urihttp://dx.doi.org/10.1109/3.364398en_US
dc.identifier.urihttp://hdl.handle.net/11536/2020-
dc.description.abstractDynamic pulse evolution characteristics of an actively mode-locked laser diode array in the external cavity have been investigated, Numerical calculations based on modified traveling-wave rate equations reproduce experimentally observed pulse and spectral width evolution and show that the buildup time is about 45 round-trips, We have also performed a theoretical analysis to understand which of the laser operating parameters would affect the buildup dynamics, It is shown that either higher de bias current or larger radiative recombination coefficient (which is inversely proportional to the excited-state lifetime) will render the laser exhibiting shorter steady-state pulse width and faster evolution to the steady state, Other parameters affecting the buildup, but to a lesser extent, include the radio-frequency (RF) modulation current, spontaneous emission coefficient, and gain coefficient, The power reflectivities of the output mirror and the antireflection coated diode facet, on the other hand, have little effect on the pulse width and buildup time for single pulse generation.en_US
dc.language.isoen_USen_US
dc.titlePULSE BUILDUP DYNAMICS OF AN ACTIVELY MODE-LOCKED LASER-DIODE ARRAY IN THE EXTERNAL-CAVITYen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/3.364398en_US
dc.identifier.journalIEEE JOURNAL OF QUANTUM ELECTRONICSen_US
dc.citation.volume31en_US
dc.citation.issue3en_US
dc.citation.spage439en_US
dc.citation.epage446en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:A1995QJ53600003-
dc.citation.woscount1-
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