統計資料
總造訪次數
| 檢視 | |
|---|---|
| EFFECTS OF COBALT SILICIDATION ON THE ELECTRICAL CHARACTERISTICS OF SHALLOW P(+)N JUNCTIONS FORMED BY BF2+ IMPLANTATION INTO THIN POLYCRYSTALLINE SI FILMS | 105 |
本月總瀏覽
| 六月 2024 | 七月 2024 | 八月 2024 | 九月 2024 | 十月 2024 | 十一月 2024 | 十二月 2024 | |
|---|---|---|---|---|---|---|---|
| EFFECTS OF COBALT SILICIDATION ON THE ELECTRICAL CHARACTERISTICS OF SHALLOW P(+)N JUNCTIONS FORMED BY BF2+ IMPLANTATION INTO THIN POLYCRYSTALLINE SI FILMS | 0 | 0 | 0 | 0 | 0 | 0 | 1 |
檔案下載
| 檢視 | |
|---|---|
| A1995QL58500047.pdf | 8 |
國家瀏覽排行
| 檢視 | |
|---|---|
| 中國 | 96 |
| 美國 | 8 |
縣市瀏覽排行
| 檢視 | |
|---|---|
| Shenzhen | 94 |
| Menlo Park | 5 |
| Beijing | 2 |
| Kensington | 2 |
| Sacramento | 1 |