Quasi-nonvolatile storage in Ru-doped Bi12SiO20 crystals by two-wavelength holography

doi:10.1364/OE.20.019628

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DC 欄位	值	語言
dc.contributor.author	Marinova, Vera	en_US
dc.contributor.author	Liu, Ren Chung	en_US
dc.contributor.author	Lin, Shiuan Huei	en_US
dc.contributor.author	Hsu, Ken Yuh	en_US
dc.date.accessioned	2014-12-08T15:28:03Z	-
dc.date.available	2014-12-08T15:28:03Z	-
dc.date.issued	2012-08-27	en_US
dc.identifier.issn	1094-4087	en_US
dc.identifier.uri	http://dx.doi.org/10.1364/OE.20.019628	en_US
dc.identifier.uri	http://hdl.handle.net/11536/20322	-
dc.description.abstract	Prolonged read-out process of a hologram recorded at near infrared with simultaneous green light exposure is measured in Ru-doped Bi12SiO20 crystal. The experimental results are confirmed by numerical simulations, suggesting two different traps involved in the space-charge transport mechanism. In addition, quasi-permanent holographic recording of image with fast updating speed by using two-wavelength recording is demonstrated. (C) 2012 Optical Society of America	en_US
dc.language.iso	en_US	en_US
dc.title	Quasi-nonvolatile storage in Ru-doped Bi12SiO20 crystals by two-wavelength holography	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1364/OE.20.019628	en_US
dc.identifier.journal	OPTICS EXPRESS	en_US
dc.citation.volume	20	en_US
dc.citation.issue	18	en_US
dc.citation.spage	19628	en_US
dc.citation.epage	19634	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000308414800003	-
dc.citation.woscount	0	-
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