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dc.contributor.authorZhang, Yu-Jieen_US
dc.contributor.authorLi, Zhi-Qingen_US
dc.contributor.authorLin, Juhn-Jongen_US
dc.date.accessioned2019-04-03T06:36:10Z-
dc.date.available2019-04-03T06:36:10Z-
dc.date.issued2011-08-12en_US
dc.identifier.issn1098-0121en_US
dc.identifier.urihttp://dx.doi.org/10.1103/PhysRevB.84.052202en_US
dc.identifier.urihttp://hdl.handle.net/11536/20375-
dc.description.abstractWe have measured the Hall coefficient R-H and the electrical conductivity sigma of a series of ultrathin indium-tin-oxide films between 2 and 300 K. A robust R-H proportional to ln T law is observed in a considerably wide temperature range of 2 and similar to 120 K. This ln T dependence is explained as originating from the electron-electron interaction effect in the presence of granularity as theoretically predicted. Furthermore, we observed sigma proportional to ln T law from 3 K up to several tens K, which also arose from the Coulomb interaction effect in inhomogeneous systems. These results provide strong experimental support for the current theoretical concepts for charge transport in granular metals with intergrain tunneling conductivity g(T) >> 1.en_US
dc.language.isoen_USen_US
dc.titleLogarithmic temperature dependence of Hall transport in granular metalsen_US
dc.typeArticleen_US
dc.identifier.doi10.1103/PhysRevB.84.052202en_US
dc.identifier.journalPHYSICAL REVIEW Ben_US
dc.citation.volume84en_US
dc.citation.issue5en_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000293829200001en_US
dc.citation.woscount19en_US
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