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dc.contributor.authorJian, Sheng-Ruien_US
dc.contributor.authorSung, T. -H.en_US
dc.contributor.authorHuang, J. C.en_US
dc.contributor.authorJuang, Jenh-Yihen_US
dc.date.accessioned2014-12-08T15:28:13Z-
dc.date.available2014-12-08T15:28:13Z-
dc.date.issued2012-10-08en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4758479en_US
dc.identifier.urihttp://hdl.handle.net/11536/20431-
dc.description.abstractWe report the deformation behavior of single-crystal InP(100) micropillars, measuring about 1 mu m in diameter and 2 mu m in height, subjected to uniaxial compression at room temperature. The engineering stress-strain results indicated that the yield strength of InP pillar is about 2.5 GPa, and the presence of a drastic strain burst right after yielding. Cross-sectional transmission electron microscopy microstructural observations reveal the formation of extremely dense twins. The results indicate that the plastic deformation in InP micropillars is dominated by explosive generation of deformation twins under the high stress state. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4758479]en_US
dc.language.isoen_USen_US
dc.titleDeformation behaviors of InP pillars under uniaxial compressionen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.4758479en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume101en_US
dc.citation.issue15en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000310304900034-
dc.citation.woscount10-
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