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dc.contributor.authorChen, Liang-Hsiangen_US
dc.contributor.authorLin, Pangen_US
dc.contributor.authorChen, Ming-Chouen_US
dc.contributor.authorHuang, Peng-Yien_US
dc.contributor.authorKim, Choongiken_US
dc.contributor.authorHo, Jia-Chongen_US
dc.contributor.authorLee, Cheng-Chungen_US
dc.date.accessioned2014-12-08T15:28:15Z-
dc.date.available2014-12-08T15:28:15Z-
dc.date.issued2012-10-01en_US
dc.identifier.issn1566-1199en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.orgel.2012.05.040en_US
dc.identifier.urihttp://hdl.handle.net/11536/20457-
dc.description.abstractSilver nanowires (AgNWs)/poly-(3,4-ethylenedioxythiophene/polystyrene sulphonate) (PEDOT:PSS) composite films as conductive electrode for OTFTs were prepared, and their optical and electrical properties were investigated. The conductive composite films used in this study afforded low sheet resistance of <140 Omega/sq and transmittance as high as 70% in the visible region. For the composite film with 0.1 wt.% of AgNWs, contact resistance as low as 2.7 x 10(4) Omega cm was obtained, as examined by Transfer length model (TLM) analysis, and work function of the corresponding film was 5.0 eV. Furthermore, the composite films were employed as source and drain electrodes for top-gate/bottom-contact organic thin-film transistors (OTFTs) based on solution-processed 5,11-bistriethylsilylethynyl anthradithiophene (TES-ADT) as organic semiconductor, and the resulting device showed high electrical performance with carrier mobility as high as 0.21 cm(2)/V s. (C) 2012 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectOrganic thin-film transistor (OTFT)en_US
dc.subjectConductive electrodeen_US
dc.subjectSilver nanowireen_US
dc.subjectAnthradithiopheneen_US
dc.titleSilver nanowire-polymer composite electrode for high performance solution-processed thin-film transistorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.orgel.2012.05.040en_US
dc.identifier.journalORGANIC ELECTRONICSen_US
dc.citation.volume13en_US
dc.citation.issue10en_US
dc.citation.spage1881en_US
dc.citation.epage1886en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000309591200016-
dc.citation.woscount7-
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