Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chen, Liang-Hsiang | en_US |
dc.contributor.author | Lin, Pang | en_US |
dc.contributor.author | Chen, Ming-Chou | en_US |
dc.contributor.author | Huang, Peng-Yi | en_US |
dc.contributor.author | Kim, Choongik | en_US |
dc.contributor.author | Ho, Jia-Chong | en_US |
dc.contributor.author | Lee, Cheng-Chung | en_US |
dc.date.accessioned | 2014-12-08T15:28:15Z | - |
dc.date.available | 2014-12-08T15:28:15Z | - |
dc.date.issued | 2012-10-01 | en_US |
dc.identifier.issn | 1566-1199 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1016/j.orgel.2012.05.040 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/20457 | - |
dc.description.abstract | Silver nanowires (AgNWs)/poly-(3,4-ethylenedioxythiophene/polystyrene sulphonate) (PEDOT:PSS) composite films as conductive electrode for OTFTs were prepared, and their optical and electrical properties were investigated. The conductive composite films used in this study afforded low sheet resistance of <140 Omega/sq and transmittance as high as 70% in the visible region. For the composite film with 0.1 wt.% of AgNWs, contact resistance as low as 2.7 x 10(4) Omega cm was obtained, as examined by Transfer length model (TLM) analysis, and work function of the corresponding film was 5.0 eV. Furthermore, the composite films were employed as source and drain electrodes for top-gate/bottom-contact organic thin-film transistors (OTFTs) based on solution-processed 5,11-bistriethylsilylethynyl anthradithiophene (TES-ADT) as organic semiconductor, and the resulting device showed high electrical performance with carrier mobility as high as 0.21 cm(2)/V s. (C) 2012 Elsevier B.V. All rights reserved. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Organic thin-film transistor (OTFT) | en_US |
dc.subject | Conductive electrode | en_US |
dc.subject | Silver nanowire | en_US |
dc.subject | Anthradithiophene | en_US |
dc.title | Silver nanowire-polymer composite electrode for high performance solution-processed thin-film transistors | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1016/j.orgel.2012.05.040 | en_US |
dc.identifier.journal | ORGANIC ELECTRONICS | en_US |
dc.citation.volume | 13 | en_US |
dc.citation.issue | 10 | en_US |
dc.citation.spage | 1881 | en_US |
dc.citation.epage | 1886 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000309591200016 | - |
dc.citation.woscount | 7 | - |
Appears in Collections: | Articles |
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