標題: | Effects of microwave annealing on electrical enhancement of amorphous oxide semiconductor thin film transistor |
作者: | Teng, Li-Feng Liu, Po-Tsun Lo, Yuan-Jou Lee, Yao-Jen 光電學院 光電工程學系 顯示科技研究所 College of Photonics Department of Photonics Institute of Display |
公開日期: | 24-九月-2012 |
摘要: | By using microwave annealing technology instead of thermal furnace annealing, this work elucidates the electrical characteristics of amorphous InGaZnO thin film transistor (a-IGZO TFT) with a carrier mobility of 13.5 cm(2)/Vs, threshold voltage of 3.28 V, and subthreshold swing of 0.43 V/decade. This TFT performance with microwave annealing of 100 s is well competitive with its counterpart with furnace annealing at 450 degrees C for 1 h. A physical mechanism for the electrical improvement is also deduced. Owing to its low thermal budget and selective heating to materials of interest, microwave annealing is highly promising for amorphous oxide in semiconductor TFT manufacturing. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4754627] |
URI: | http://dx.doi.org/10.1063/1.4754627 http://hdl.handle.net/11536/20476 |
ISSN: | 0003-6951 |
DOI: | 10.1063/1.4754627 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 101 |
Issue: | 13 |
結束頁: | |
顯示於類別: | 期刊論文 |