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dc.contributor.authorLi, Yimingen_US
dc.contributor.authorChao, Hsueh-Yungen_US
dc.contributor.authorLo, Hsiang-Yuen_US
dc.date.accessioned2014-12-08T15:28:22Z-
dc.date.available2014-12-08T15:28:22Z-
dc.date.issued2008-09-01en_US
dc.identifier.issn1569-8025en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s10825-007-0168-0en_US
dc.identifier.urihttp://hdl.handle.net/11536/20526-
dc.description.abstractTwo different surface conduction electron-emitter (SCE) structures with the nanogap of 90 nm wide fabricated by hydrogen embrittlement (HE) and focused ion beam techniques are simulated for the first time. We employ a three-dimensional particle-in-cell method coupling with finite-difference time-domain scheme to simulate the property of electron emission in these SCEs. Our calibrated simulation predicts high emission efficiency of the SCE structure which is fabricated by HE. Compared with the other SCE structure, it is observed that the proposed structure possesses low power consumption at the fixed emission current when the width of nanogap becomes narrower. The current-voltage characteristics including conducting mechanisms are investigated and explained.en_US
dc.language.isoen_USen_US
dc.subjectSurface conduction electron-emitteren_US
dc.subjectHydrogen embrittlementen_US
dc.subjectFocused ion beamen_US
dc.subjectFinite-difference time-domain particle-in-cell methoden_US
dc.subjectCurrent-voltage characteristicen_US
dc.subjectElectric fieldsen_US
dc.subjectElectron trajectoriesen_US
dc.titleHigh field emission efficiency surface conduction electron emittersen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s10825-007-0168-0en_US
dc.identifier.journalJOURNAL OF COMPUTATIONAL ELECTRONICSen_US
dc.citation.volume7en_US
dc.citation.issue3en_US
dc.citation.spage440en_US
dc.citation.epage444en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000208473800081-
dc.citation.woscount4-
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