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dc.contributor.authorCheng, Yu-Chihen_US
dc.contributor.authorChen, Ting-Gangen_US
dc.contributor.authorChang, Feng-Yuen_US
dc.contributor.authorHuang, Bo-Yuen_US
dc.contributor.authorPan, Huai-Teen_US
dc.contributor.authorLi, Chi-Kangen_US
dc.contributor.authorYu, Peichenen_US
dc.contributor.authorWu, Yuh-Rennen_US
dc.date.accessioned2014-12-08T15:28:24Z-
dc.date.available2014-12-08T15:28:24Z-
dc.date.issued2012en_US
dc.identifier.isbn978-1-4673-0066-7en_US
dc.identifier.urihttp://hdl.handle.net/11536/20556-
dc.description.abstractNanostructured crystalline silicon is promising for thin photovoltaic devices due to reduced material usage and wafer quality constraint. In this study, a simple and cost-effective method is presented for producing large-area silicon nanowire (SiNW) arrays with various lengths by employing the polystyrene nanosphere lithography and the metal-assisted chemical etching (MACE). The nanowire structure exhibits broadband and omnidirectional antireflection properties, where the lowest AM1.5G-spectrum-weighted reflectance of SiNW arrays is 4.38%, compared to 8.84% of the conventional single layer antireflection coating (SLARC). Next, we made SiNW array structures into solar cells and its power efficiency achieved 10.8%. Afterward, the SiNW array solar cells were analyzed by external and internal quantum efficiency measurement which shows the device performance primarily limited by direct and indirect interfacial recombination of charge carriers. We further develop a modeling technique based on three-dimensional (3) optical and two-dimensional (20) electrical simulations which are tailored for the nanostructured silicon photovoltaic devices. The optical simulation employs a rigorous couple wave analysis (RCWA) technique to calculate the distribution of electromagnetic field in order to obtain the generation rate within the nanostructure. Next, an electrical calculation is based on a 20 self-consistent drift-diffusion and Poisson solver using a finite element method (FEM). We investigate the influence to the device performance of carrier diffusion length with three different structures. The simulation results show that a short diffusion length does not seriously deteriorate the short-circuit current density and power conversion efficiency of a core-shell PN junction solar cell compared to the conventional planar structure. Our work suggests that SiNW solar cells can achieve efficient light harvesting and photoelectric conversion with less and lower-grade materials than the conventional technology, which is promising for thin silicon photovoltaics.en_US
dc.language.isoen_USen_US
dc.titleFABRICATION AND MODELING OF LARGE-SCALE SILICON NANOWIRE SOLAR CELLS FOR THIN-FILM PHOTOVOLTAICSen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)en_US
dc.citation.spage3083en_US
dc.citation.epage3086en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000309917803082-
Appears in Collections:Conferences Paper