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dc.contributor.authorChen, K. N.en_US
dc.contributor.authorCheng, C. A.en_US
dc.contributor.authorHuang, W. C.en_US
dc.contributor.authorKo, C. T.en_US
dc.date.accessioned2014-12-08T15:28:24Z-
dc.date.available2014-12-08T15:28:24Z-
dc.date.issued2011-08-01en_US
dc.identifier.issn1533-4880en_US
dc.identifier.urihttp://dx.doi.org/10.1166/jnn.2011.4202en_US
dc.identifier.urihttp://hdl.handle.net/11536/20561-
dc.description.abstractBonding temperature optimization of SU-8 material for metal/adhesive hybrid bonding was investigated. The good bond quality of SU-8 adhesive can be achieved with the bonding temperature between 150 degrees C and 250 degrees C, while bond failures of SU-8 wafers are observed starting from 275 degrees C. IR transmittance spectra measurements indicate the crosslinks inside SU-8 break and further bond failure is observed due to the large decomposition of epoxy rings and phenyl in plane bending above 275 degrees C. This research provides guidelines of material selection and bonding parameters for heterogeneous integration, 3DIC and MEMS applications using metal/adhesive hybrid bonding.en_US
dc.language.isoen_USen_US
dc.subjectWafer Bondingen_US
dc.subjectSU-8en_US
dc.subjectHybrid Bondingen_US
dc.subjectAdhesive Bondingen_US
dc.titleBonding Temperature Optimization and Property Evolution of SU-8 Material in Metal/Adhesive Hybrid Wafer Bondingen_US
dc.typeArticleen_US
dc.identifier.doi10.1166/jnn.2011.4202en_US
dc.identifier.journalJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGYen_US
dc.citation.volume11en_US
dc.citation.issue8en_US
dc.citation.spage6969en_US
dc.citation.epage6972en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000295296400045-
dc.citation.woscount2-
Appears in Collections:Articles


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