Title: | Body-Tied Germanium FinFETs Directly on a Silicon Substrate |
Authors: | Chen, Che-Wei Chung, Cheng-Ting Luo, Guang-Li Chien, Chao-Hsin 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
Keywords: | Body-tied fin field-effect transistors (FinFETs);germanium;heterojunctions;high-mobility channel |
Issue Date: | 1-Dec-2012 |
Abstract: | We fabricated body-tied Ge p-channel fin field-effect transistors (p-FinFETs) directly on a Si substrate with a high-kappa/metal gate stack. This scheme is fully compatible with Si standard processing. The FinFET structure has excellent control on the channel potential and thus can improve the short-channel effect. The diode with p(+)-Ge/n-Si heterojunctions illustrates a remarkably high I-ON/I-OFF > 10(6) despite the presence of misfit dislocations at the interface. The high-hole-mobility body-tied Ge p-FinFETs with a fin width W-Fin of similar to 40 nm and a mask channel length L-Mask of 120 nm depict a driving current of 22 mu A/mu m at V-G = -2 V and a low OFF-current of 3 nA/mu m at V-G = 2 V. The subthreshold characteristics with a swing of 228 mV/dec and drain-induced barrier lowering of 288 mV/V are demonstrated. |
URI: | http://dx.doi.org/10.1109/LED.2012.2217473 http://hdl.handle.net/11536/20587 |
ISSN: | 0741-3106 |
DOI: | 10.1109/LED.2012.2217473 |
Journal: | IEEE ELECTRON DEVICE LETTERS |
Volume: | 33 |
Issue: | 12 |
Begin Page: | 1678 |
End Page: | 1680 |
Appears in Collections: | Articles |
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