Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Tsai, Tsung-Ming | en_US |
dc.contributor.author | Chang, Kuan-Chang | en_US |
dc.contributor.author | Chang, Ting-Chang | en_US |
dc.contributor.author | Syu, Yong-En | en_US |
dc.contributor.author | Chuang, Siang-Lan | en_US |
dc.contributor.author | Chang, Geng-Wei | en_US |
dc.contributor.author | Liu, Guan-Ru | en_US |
dc.contributor.author | Chen, Min-Chen | en_US |
dc.contributor.author | Huang, Hui-Chun | en_US |
dc.contributor.author | Liu, Shih-Kun | en_US |
dc.contributor.author | Tai, Ya-Hsiang | en_US |
dc.contributor.author | Gan, Der-Shin | en_US |
dc.contributor.author | Yang, Ya-Liang | en_US |
dc.contributor.author | Young, Tai-Fa | en_US |
dc.contributor.author | Tseng, Bae-Heng | en_US |
dc.contributor.author | Chen, Kai-Huang | en_US |
dc.contributor.author | Tsai, Ming-Jinn | en_US |
dc.contributor.author | Ye, Cong | en_US |
dc.contributor.author | Wang, Hao | en_US |
dc.contributor.author | Sze, Simon M. | en_US |
dc.date.accessioned | 2014-12-08T15:28:27Z | - |
dc.date.available | 2014-12-08T15:28:27Z | - |
dc.date.issued | 2012-12-01 | en_US |
dc.identifier.issn | 0741-3106 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/LED.2012.2217933 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/20589 | - |
dc.description.abstract | In this letter, we successfully produced resistive switching behaviors by nickel doped into silicon oxide at room temperature. The nickel element was doped into silicon oxide, which is a useful dielectric material in integrated circuit (IC) industries by cosputtering technology. Based on the proposed method, satisfactory reliability of the resistance switching device can be demonstrated by endurance and retention evaluation. We believe that the silicon oxide doped with nickel at room temperature is a promising method for resistive random access memory nonvolatile memory applications due to its compatibility with the IC processes. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Nonvolatile memory (NVM) | en_US |
dc.subject | nickel | en_US |
dc.subject | resistive switching | en_US |
dc.subject | silicon oxide | en_US |
dc.title | Bipolar Resistive RAM Characteristics Induced by Nickel Incorporated Into Silicon Oxide Dielectrics for IC Applications | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/LED.2012.2217933 | en_US |
dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
dc.citation.volume | 33 | en_US |
dc.citation.issue | 12 | en_US |
dc.citation.spage | 1696 | en_US |
dc.citation.epage | 1698 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000311808300008 | - |
dc.citation.woscount | 22 | - |
Appears in Collections: | Articles |
Files in This Item:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.