完整後設資料紀錄
DC 欄位語言
dc.contributor.authorChen, Chung Weien_US
dc.contributor.authorRen, Fanen_US
dc.contributor.authorChi, Gou-Chungen_US
dc.contributor.authorHung, Sheng-Chunen_US
dc.contributor.authorHuang, Y. P.en_US
dc.contributor.authorKim, Jihyunen_US
dc.contributor.authorKravchenko, Ivan I.en_US
dc.contributor.authorPearton, Stephen J.en_US
dc.date.accessioned2014-12-08T15:28:32Z-
dc.date.available2014-12-08T15:28:32Z-
dc.date.issued2012-11-01en_US
dc.identifier.issn1071-1023en_US
dc.identifier.urihttp://dx.doi.org/10.1116/1.4754566en_US
dc.identifier.urihttp://hdl.handle.net/11536/20637-
dc.description.abstractOptimized UV ozone cleaning of graphene layers on SiO2/Si substrates is shown to improve contact resistance of e-beam evaporated Ti/Au contacts by three orders of magnitude (3 x 10(-6) Omega-cm(2)) compared to untreated surfaces (4 x 10(-3) Omega-cm(2)). Subsequent annealing at 300 degrees C lowers the minimum value achieved to 7 x 10(-7) Omega-cm(2). Ozone exposure beyond an optimum time (6 min in these experiments) led to a sharp increase in sheet resistance of the graphene, producing degraded contact resistance. The UV ozone treatment is a simple and effective method for producing high quality contacts to graphene. (C) 2012 American Vacuum Society. [http://dx.doi.org/10.1116/1.4754566]en_US
dc.language.isoen_USen_US
dc.titleUV ozone treatment for improving contact resistance on grapheneen_US
dc.typeArticleen_US
dc.identifier.doi10.1116/1.4754566en_US
dc.identifier.journalJOURNAL OF VACUUM SCIENCE & TECHNOLOGY Ben_US
dc.citation.volume30en_US
dc.citation.issue6en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000311667300082-
dc.citation.woscount6-
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