完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, Chung Wei | en_US |
dc.contributor.author | Ren, Fan | en_US |
dc.contributor.author | Chi, Gou-Chung | en_US |
dc.contributor.author | Hung, Sheng-Chun | en_US |
dc.contributor.author | Huang, Y. P. | en_US |
dc.contributor.author | Kim, Jihyun | en_US |
dc.contributor.author | Kravchenko, Ivan I. | en_US |
dc.contributor.author | Pearton, Stephen J. | en_US |
dc.date.accessioned | 2014-12-08T15:28:32Z | - |
dc.date.available | 2014-12-08T15:28:32Z | - |
dc.date.issued | 2012-11-01 | en_US |
dc.identifier.issn | 1071-1023 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1116/1.4754566 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/20637 | - |
dc.description.abstract | Optimized UV ozone cleaning of graphene layers on SiO2/Si substrates is shown to improve contact resistance of e-beam evaporated Ti/Au contacts by three orders of magnitude (3 x 10(-6) Omega-cm(2)) compared to untreated surfaces (4 x 10(-3) Omega-cm(2)). Subsequent annealing at 300 degrees C lowers the minimum value achieved to 7 x 10(-7) Omega-cm(2). Ozone exposure beyond an optimum time (6 min in these experiments) led to a sharp increase in sheet resistance of the graphene, producing degraded contact resistance. The UV ozone treatment is a simple and effective method for producing high quality contacts to graphene. (C) 2012 American Vacuum Society. [http://dx.doi.org/10.1116/1.4754566] | en_US |
dc.language.iso | en_US | en_US |
dc.title | UV ozone treatment for improving contact resistance on graphene | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1116/1.4754566 | en_US |
dc.identifier.journal | JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | en_US |
dc.citation.volume | 30 | en_US |
dc.citation.issue | 6 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 光電工程學系 | zh_TW |
dc.contributor.department | Department of Photonics | en_US |
dc.identifier.wosnumber | WOS:000311667300082 | - |
dc.citation.woscount | 6 | - |
顯示於類別: | 期刊論文 |