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dc.contributor.authorLu, Tien-Changen_US
dc.contributor.authorKao, Tsung-Tingen_US
dc.contributor.authorChen, Shih-Weien_US
dc.contributor.authorKao, Chih-Chiangen_US
dc.contributor.authorLin, Li-Fanen_US
dc.contributor.authorKuo, Tzu-Wei Liu Hao-Chungen_US
dc.contributor.authorWang, Shing-Chungen_US
dc.date.accessioned2014-12-08T15:03:32Z-
dc.date.available2014-12-08T15:03:32Z-
dc.date.issued2008en_US
dc.identifier.isbn978-1-55752-859-9en_US
dc.identifier.urihttp://hdl.handle.net/11536/2063-
dc.description.abstractWe report fabrication of GaN-based two-dimensional surface emitting photonic-crystal lasers and successful demonstration of lasing action at room temperature with the emission wavelength at 424.3 nm and a low threshold pumping energy density of 3.5 mJ/cm(2). (c) 2008 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleThe Lasing Action of GaN-based Two-Dimensional Surface-emitting Photonic Crystal Lasersen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9en_US
dc.citation.spage526en_US
dc.citation.epage527en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000260498400264-
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