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dc.contributor.authorChen, En-Chenen_US
dc.contributor.authorYeh, Han-Chengen_US
dc.contributor.authorChao, Yu-Chiangen_US
dc.contributor.authorMeng, Hsin-Feien_US
dc.contributor.authorZan, Hsiao-Wenen_US
dc.contributor.authorLiang, Yun-Chien_US
dc.contributor.authorHuang, Chin-Pingen_US
dc.contributor.authorChen, Teng-Mingen_US
dc.contributor.authorWang, Chih-Fengen_US
dc.contributor.authorChueh, Chu-Chenen_US
dc.contributor.authorChen, Wen-Changen_US
dc.contributor.authorHorng, Sheng-Fuen_US
dc.date.accessioned2014-12-08T15:28:33Z-
dc.date.available2014-12-08T15:28:33Z-
dc.date.issued2012-11-01en_US
dc.identifier.issn1566-1199en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.orgel.2012.05.010en_US
dc.identifier.urihttp://hdl.handle.net/11536/20651-
dc.description.abstractAn efficient visible-to-infrared conversion film is made by blending CdTe quantum dots (CdTe QDs) of 12 nm diameter in a polyvinylpyrrolidone 360 (PVP 360) polymer matrix cast by water solution. The solid-state photoluminescence quantum efficiency exceeds 10% with emission peak at 810 nm. Strong 810 emission is obtained by combining the quantum dot film and a green polyfluorene light-emitting diode. Color filter is used to remove residual light below 780 nm to make it entirely invisible. Infrared photo-detector is made by blending poly[5-(5-(2,5-bis(decyloxy)-4-methylphenyl)thiophen-2-yl)-2,3-bis(4-(2-ethylhexyloxy)phenyl)-7-(5-methylthiophen-2-yl)thieno[3,4-b]pyrazine] (PBDOTTP) with band-gap 1.2 eV and (6,6)-phenyl-C61-butyric acid methyl ester (PCBM). The pixel contains one PD surrounded by four PLED on its four sides. The active areas of the five devices are all I cm by 1 cm and they are on the same plane. Infrared proximity sensor with photo-current over 300 nA at 10 cm object distance is achieved by detecting the reflected infrared signal. (C) 2012 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectQuantum dotsen_US
dc.subjectPLEDen_US
dc.subjectInfrared proximity sensoren_US
dc.titleInfrared proximity sensor using organic light-emitting diode with quantum dots converteren_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.orgel.2012.05.010en_US
dc.identifier.journalORGANIC ELECTRONICSen_US
dc.citation.volume13en_US
dc.citation.issue11en_US
dc.citation.spage2312en_US
dc.citation.epage2318en_US
dc.contributor.department應用化學系zh_TW
dc.contributor.department物理研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Applied Chemistryen_US
dc.contributor.departmentInstitute of Physicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000311177700014-
dc.citation.woscount1-
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