完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | WU, JW | en_US |
dc.contributor.author | CHANG, CY | en_US |
dc.contributor.author | LIN, KC | en_US |
dc.contributor.author | CHANG, EY | en_US |
dc.contributor.author | CHEN, JS | en_US |
dc.contributor.author | LEE, CT | en_US |
dc.date.accessioned | 2014-12-08T15:03:32Z | - |
dc.date.available | 2014-12-08T15:03:32Z | - |
dc.date.issued | 1995-02-01 | en_US |
dc.identifier.issn | 0361-5235 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1007/BF02659625 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/2065 | - |
dc.description.abstract | The thermal stability of ohmic contact to n-type InGaAs layer is investigated. When Ni/Ge/Au is used as the contact metal, the characteristics of the ohmic contact are degraded after thermal treatment. The specific contact resistance of (Ni/Ge/Au)-InGaAs ohmic contact after annealing at 450 degrees C is about 15 times larger than that of as-deposited sample. This is due to the decomposition of InGaAs and the interdiffusion of Ga and Au.-A new phase of Au4In appears after annealing at 300 degrees C. While in the case of Ti/Pt/Au, Au does not penetrate into the InGaAs layer as revealed by secondary ion mass spectroscopy. The specific contact resistance of(Ti/Pt/Au)-InGaAs ohmic contact after annealing at 450 degrees C is eight times larger than that of as-deposited sample. Therefore, the thermal stability of(Ti/Pt/Au)-InGaAs ohmic contact is better than that of(Ni/Ge/Au)-InGaAs ohmic contact. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | INGAAS | en_US |
dc.subject | OHMIC CONTACT | en_US |
dc.subject | SPECIFIC CONTACT RESISTANCE | en_US |
dc.subject | THERMAL STABILITY | en_US |
dc.title | THE THERMAL-STABILITY OF OHMIC CONTACT TO N-TYPE INGAAS LAYER | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1007/BF02659625 | en_US |
dc.identifier.journal | JOURNAL OF ELECTRONIC MATERIALS | en_US |
dc.citation.volume | 24 | en_US |
dc.citation.issue | 2 | en_US |
dc.citation.spage | 79 | en_US |
dc.citation.epage | 82 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電控工程研究所 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Institute of Electrical and Control Engineering | en_US |
dc.identifier.wosnumber | WOS:A1995QE92000003 | - |
dc.citation.woscount | 5 | - |
顯示於類別: | 期刊論文 |