標題: Resistive switching of Au/ZnO/Au resistive memory: an in situ observation of conductive bridge formation
作者: Peng, Chung-Nan
Wang, Chun-Wen
Chan, Tsung-Cheng
Chang, Wen-Yuan
Wang, Yi-Chung
Tsai, Hung-Wei
Wu, Wen-Wei
Chen, Lih-Juann
Chueh, Yu-Lun
材料科學與工程學系
Department of Materials Science and Engineering
關鍵字: Real-time observation;Au/ZnO/Au;Conducting bridge;Au nanoparticles
公開日期: 8-Oct-2012
摘要: A special chip for direct and real-time observation of resistive changes, including set and reset processes based on Au/ZnO/Au system inside a transmission electron microscope (TEM), was designed. A clear conducting bridge associated with the migration of Au nanoparticles (NPs) inside a defective ZnO film from anode to cathode could be clearly observed by taking a series of TEM images, enabling a dynamic observation of switching behaviors. A discontinuous region (broken region) nearby the cathode after reset process was observed, which limits the flow of current, thus a high resistance state, while it will be reconnected to switch the device from high to low resistance states through the migration of Au NPs after set process. Interestingly, the formed morphology of the conducting bridge, which is different from the typical formation of a conducting bridge, was observed. The difference can be attributed to the different diffusivities of cations transported inside the dielectric layer, thereby significantly influencing the morphology of the conducting path. The current TEM technique is quite unique and informative, which can be used to elucidate the dynamic processes in other devices in the future.
URI: http://dx.doi.org/10.1186/1556-276X-7-559
http://hdl.handle.net/11536/20684
ISSN: 1931-7573
DOI: 10.1186/1556-276X-7-559
期刊: NANOSCALE RESEARCH LETTERS
Volume: 7
Issue: 
結束頁: 
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