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dc.contributor.authorTeng, I-Juen_US
dc.contributor.authorHsu, Hui-Linen_US
dc.contributor.authorJian, Sheng-Ruien_US
dc.contributor.authorKuo, Cheng-Tzuen_US
dc.contributor.authorJuang, Jenh-Yihen_US
dc.date.accessioned2014-12-08T15:28:38Z-
dc.date.available2014-12-08T15:28:38Z-
dc.date.issued2012en_US
dc.identifier.issn2040-3364en_US
dc.identifier.urihttp://hdl.handle.net/11536/20706-
dc.identifier.urihttp://dx.doi.org/10.1039/c2nr31511den_US
dc.description.abstractNovel cone-shaped carbon nanofiber (CNF)/silicon carbide (SiC)-coated Si-nanocone (Si-NC) composite structures with excellent field emission (FE) performance have been fabricated by a simple microwave plasma chemical vapour deposition process. Transmission electron microscopy analyses reveal that the newly developed cone-shaped composite structures are composed of bamboo-like herringbone CNFs grown vertically on the tips of conical SiC layers with a flat-top Si cone embedded underneath. For this CNF/SiC-coated Si-NC composite array, a ultra-low threshold field of 0.32 V mu m(-1) (at 10 mA cm(-2)), a large emission current density of 668 mA cm(-2) at 1.05 V mu m(-1), and a field enhancement factor as high as similar to 48 349 are obtained. In addition, the FE lifetime test performed at a large emission current density of 200 mA cm(-2) under an applied field of 1 V mu m(-1) shows no discernible decay during a period of over 260 minutes. We deduce that this superior FE performance can be attributed to the specific bamboo-like herringbone CNFs with numerous open graphitic edges and a faceted top end, and the conical base SiC/ Si structures with sufficient adhesion to the substrate surface. Such a novel structure with promising emission characteristics makes it a potential material for electron field emitters.en_US
dc.language.isoen_USen_US
dc.titleFabrication of cone-shaped CNF/SiC-coated Si-nanocone composite structures and their excellent field emission performanceen_US
dc.typeArticleen_US
dc.identifier.doi10.1039/c2nr31511den_US
dc.identifier.journalNANOSCALEen_US
dc.citation.volume4en_US
dc.citation.issue23en_US
dc.citation.spage7362en_US
dc.citation.epage7368en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000310978900012-
dc.citation.woscount3-
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