MOCVD growth of GaN nanopyramid and nanopillar LED with emission in green to orange color

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DC Field	Value	Language
dc.contributor.author	Kuo, Hao-Chung	en_US
dc.contributor.author	Cheng, Yuh-Jen	en_US
dc.date.accessioned	2014-12-08T15:28:40Z	-
dc.date.available	2014-12-08T15:28:40Z	-
dc.date.issued	2012	en_US
dc.identifier.isbn	978-0-8194-9184-8	en_US
dc.identifier.issn	0277-786X	en_US
dc.identifier.uri	http://hdl.handle.net/11536/20736	-
dc.identifier.uri	http://dx.doi.org/10.1117/12.970434	en_US
dc.description.abstract	We report the fabrication and demonstration of electrically driven green, yellow-green, and amber color nanopyramid LEDs. The quantum wells were grown on nanopyramid facets, which have low polarization field and allow high In incorporation.	en_US
dc.language.iso	en_US	en_US
dc.subject	GaN LED	en_US
dc.subject	nanopyramid	en_US
dc.subject	MOCVD epitaxy	en_US
dc.title	MOCVD growth of GaN nanopyramid and nanopillar LED with emission in green to orange color	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1117/12.970434	en_US
dc.identifier.journal	NANOEPITAXY: MATERIALS AND DEVICES IV	en_US
dc.citation.volume	8467	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000312962700003	-
Appears in Collections:	Conferences Paper

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