CW Lasing of Current Injection Blue GaN-Based Vertical Cavity Surface Emitting Lasers

Full metadata record

DC Field	Value	Language
dc.contributor.author	Lu, Tien-Chang	en_US
dc.contributor.author	Kno, Tsung-Ting	en_US
dc.contributor.author	Chen, Shih-Wei	en_US
dc.contributor.author	Kao, Chib-Chiang	en_US
dc.contributor.author	Kuo, Hao-Chung	en_US
dc.contributor.author	Wang, Shing-Chung	en_US
dc.date.accessioned	2014-12-08T15:03:32Z	-
dc.date.available	2014-12-08T15:03:32Z	-
dc.date.issued	2008	en_US
dc.identifier.isbn	978-1-55752-859-9	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2074	-
dc.description.abstract	We demonstrated CW laser operation of GAN-based VCSELs under current injection at 77K. CW laser action was achieved at a threshold current of 1.4mA, emitting at 462nm with a narrow linewidth of about 0.15nm. (c) 2008 Optical Society of America	en_US
dc.language.iso	en_US	en_US
dc.title	CW Lasing of Current Injection Blue GaN-Based Vertical Cavity Surface Emitting Lasers	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2008 CONFERENCE ON LASERS AND ELECTRO-OPTICS & QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE, VOLS 1-9	en_US
dc.citation.spage	534	en_US
dc.citation.epage	535	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000260498400268	-
Appears in Collections:	Conferences Paper