Improved 1.3-mu m Electroluminescence of InGaAs-Capped Type-II GaSb/GaAs Quantum Rings at Room Temperature

doi:10.1109/LPT.2012.2229700

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lin, Wei-Hsun	en_US
dc.contributor.author	Wang, Kai-Wei	en_US
dc.contributor.author	Lin, Shih-Yen	en_US
dc.contributor.author	Wu, Meng-Chyi	en_US
dc.date.accessioned	2014-12-08T15:28:43Z	-
dc.date.available	2014-12-08T15:28:43Z	-
dc.date.issued	2013-01-01	en_US
dc.identifier.issn	1041-1135	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LPT.2012.2229700	en_US
dc.identifier.uri	http://hdl.handle.net/11536/20788	-
dc.description.abstract	Room-temperature 1.3-mu m electroluminescence is observed for the InGaAs-capped GaSb quantum rings (QRs). The increasing carrier density in the InGaAs-capped type-II GaSb QRs would induce a larger blue shift in the same laser pumping power span and enhance the luminescence intensity. The enhanced luminescence intensity, a larger blue shift of peak wavelength, and 1.3-mu m emission of the InGaAs-capped QR structure have revealed its potential application in multi-wavelength light-emitting devices in the near infrared range.	en_US
dc.language.iso	en_US	en_US
dc.subject	GaSb quantum rings	en_US
dc.subject	light-emitting devices	en_US
dc.title	Improved 1.3-mu m Electroluminescence of InGaAs-Capped Type-II GaSb/GaAs Quantum Rings at Room Temperature	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LPT.2012.2229700	en_US
dc.identifier.journal	IEEE PHOTONICS TECHNOLOGY LETTERS	en_US
dc.citation.volume	25	en_US
dc.citation.issue	1	en_US
dc.citation.spage	97	en_US
dc.citation.epage	99	en_US
dc.contributor.department	光電學院	zh_TW
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	College of Photonics	en_US
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000312890100027	-
dc.citation.woscount	1	-
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