標題: | 830-nm AlGaAs-InGaAs Graded Index Double Barrier Separate Confinement Heterostructures Laser Diodes With Improved Temperature and Divergence Characteristics |
作者: | Hung, Chih-Tsang Lu, Tien-Chang 光電工程學系 Department of Photonics |
關鍵字: | AlGaAs-InGaAs heterostructure;laser beam divergence;laser diodes;quantum wells |
公開日期: | 1-一月-2013 |
摘要: | The 830-nm AlGaAs/InGaAs laser diodes (LDs) adopting multistep-graded index double-barrier separate confinement heterostructures (GRIN-DBSCHs) with small divergence beams and improved temperature characteristics under a high-output-power operation are reported. The double-barrier separate confinement heterostructure (DBSCH) design provides good carrier confinement and prevents current leakage by adding a multistep grading layer between cladding and waveguide layers. Simultaneously, the DBSCH design can facilitate reducing the divergence angle at high-power operation and widening the transverse mode distribution to decrease the power density around emission facets. In addition, the p-side doping depth is optimized to effectively raise the barrier height for reducing the electron overflow. Gaussian-like narrow far-field patterns are measured with the full-width at half-maximum vertical divergence angle to be between 11 degrees and 13 degrees. A threshold current of 16.5 mA and a slop efficiency of 0.98 W/A are obtained in the continuous-wave operation condition at room temperature. The maxima optical power densities of 21.5 MW/cm(2) per laser facet and good characteristic temperature values of threshold current (T-0) and slope efficiency (T-1) are achieved. |
URI: | http://dx.doi.org/10.1109/JQE.2012.2231053 http://hdl.handle.net/11536/20801 |
ISSN: | 0018-9197 |
DOI: | 10.1109/JQE.2012.2231053 |
期刊: | IEEE JOURNAL OF QUANTUM ELECTRONICS |
Volume: | 49 |
Issue: | 1 |
起始頁: | 127 |
結束頁: | 132 |
顯示於類別: | 期刊論文 |