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dc.contributor.authorHung, Chih-Tsangen_US
dc.contributor.authorLu, Tien-Changen_US
dc.date.accessioned2014-12-08T15:28:45Z-
dc.date.available2014-12-08T15:28:45Z-
dc.date.issued2013-01-01en_US
dc.identifier.issn0018-9197en_US
dc.identifier.urihttp://dx.doi.org/10.1109/JQE.2012.2231053en_US
dc.identifier.urihttp://hdl.handle.net/11536/20801-
dc.description.abstractThe 830-nm AlGaAs/InGaAs laser diodes (LDs) adopting multistep-graded index double-barrier separate confinement heterostructures (GRIN-DBSCHs) with small divergence beams and improved temperature characteristics under a high-output-power operation are reported. The double-barrier separate confinement heterostructure (DBSCH) design provides good carrier confinement and prevents current leakage by adding a multistep grading layer between cladding and waveguide layers. Simultaneously, the DBSCH design can facilitate reducing the divergence angle at high-power operation and widening the transverse mode distribution to decrease the power density around emission facets. In addition, the p-side doping depth is optimized to effectively raise the barrier height for reducing the electron overflow. Gaussian-like narrow far-field patterns are measured with the full-width at half-maximum vertical divergence angle to be between 11 degrees and 13 degrees. A threshold current of 16.5 mA and a slop efficiency of 0.98 W/A are obtained in the continuous-wave operation condition at room temperature. The maxima optical power densities of 21.5 MW/cm(2) per laser facet and good characteristic temperature values of threshold current (T-0) and slope efficiency (T-1) are achieved.en_US
dc.language.isoen_USen_US
dc.subjectAlGaAs-InGaAs heterostructureen_US
dc.subjectlaser beam divergenceen_US
dc.subjectlaser diodesen_US
dc.subjectquantum wellsen_US
dc.title830-nm AlGaAs-InGaAs Graded Index Double Barrier Separate Confinement Heterostructures Laser Diodes With Improved Temperature and Divergence Characteristicsen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/JQE.2012.2231053en_US
dc.identifier.journalIEEE JOURNAL OF QUANTUM ELECTRONICSen_US
dc.citation.volume49en_US
dc.citation.issue1en_US
dc.citation.spage127en_US
dc.citation.epage132en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000312829500002-
dc.citation.woscount2-
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