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dc.contributor.authorHsu, Bailey C.en_US
dc.contributor.authorLin, Chiung-Yuanen_US
dc.contributor.authorHsieh, Yau-Shianen_US
dc.contributor.authorChen, Yu-Changen_US
dc.date.accessioned2014-12-08T15:28:50Z-
dc.date.available2014-12-08T15:28:50Z-
dc.date.issued2012-12-10en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4769814en_US
dc.identifier.urihttp://hdl.handle.net/11536/20836-
dc.description.abstractRecent experiments revealed that surface reconstruction occurs at around 300-400 K in the interface of C-60 adsorbed on Cu(111) substrate by scanning tunneling microscope techniques. To understand effects of such reconstruction on thermopower, we investigate the Seebeck coefficients of C-60 single-molecular junctions without and with surface reconstruction as a function of temperature at different tip-to-molecule heights from first-principles. Our calculations show that surface reconstruction can enhance or suppress Seebeck coefficients according to junctions at different tip heights. We further observe that the Seebeck coefficient of the junction at d = 3.4 angstrom may change from p- to n-type under surface reconstruction. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4769814]en_US
dc.language.isoen_USen_US
dc.titleTailoring thermopower of single-molecular junctions by temperature-induced surface reconstructionen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.4769814en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume101en_US
dc.citation.issue24en_US
dc.citation.epageen_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000312490000075-
dc.citation.woscount5-
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