TRANSIENT SIMULATION OF EPROM WRITING CHARACTERISTICS, WITH A NOVEL HOT-ELECTRON INJECTION MODEL

doi:10.1016/0038-1101(94)00087-V

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DC Field	Value	Language
dc.contributor.author	HUANG, CM	en_US
dc.contributor.author	WANG, TH	en_US
dc.date.accessioned	2014-12-08T15:03:33Z	-
dc.date.available	2014-12-08T15:03:33Z	-
dc.date.issued	1995-02-01	en_US
dc.identifier.issn	0038-1101	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/0038-1101(94)00087-V	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2083	-
dc.description.abstract	A two-dimensional transient simulation of EPROM writing characteristics is presented. A Monte Carlo-based hot electron injection model which accounts for Fowler-Nordheim tunneling and thermionic emission has been included in the simulation. The simulated EPROM writing transient characteristics is compared favorably with experimental results for channel lengths down to 0.5 mu m. The importance of the two injection mechanisms, thermionic emission and quantum tunneling, is evaluated.	en_US
dc.language.iso	en_US	en_US
dc.title	TRANSIENT SIMULATION OF EPROM WRITING CHARACTERISTICS, WITH A NOVEL HOT-ELECTRON INJECTION MODEL	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/0038-1101(94)00087-V	en_US
dc.identifier.journal	SOLID-STATE ELECTRONICS	en_US
dc.citation.volume	38	en_US
dc.citation.issue	2	en_US
dc.citation.spage	461	en_US
dc.citation.epage	464	en_US
dc.contributor.department	交大名義發表	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	National Chiao Tung University	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1995QE10900030	-
dc.citation.woscount	3	-
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