Efficiency and Droop Improvement in GaN-Based High-Voltage Light-Emitting Diodes

標題:	Efficiency and Droop Improvement in GaN-Based High-Voltage Light-Emitting Diodes
作者:	Wang, C. H. Lin, D. W. Lee, C. Y. Tsai, M. A. Chen, G. L. Kuo, H. T. Hsu, W. H. Kuo, H. C. Lu, T. C. Wang, S. C. Chi, G. C. 電子物理學系光電工程學系 Department of Electrophysics Department of Photonics
關鍵字:	Current spreading;efficiency droop;high voltage;light-emitting diodes
公開日期:	1-Aug-2011
摘要:	The efficiency and electrical characteristics of GaN-based high-voltage light-emitting diodes (HV-LEDs) are investigated in detail. The spatial distribution of light output and simulation results showed that 100-V HV-LED with smaller microchips had superior current spreading. As a result, under 1-W operation, the luminous efficiency of 100-V HV-LED with smaller microchips was enhanced by 7.8% compared to that of 50-V HV-LED, while the efficiency droop behaviors were reduced from 28% in 50-V HV-LED to 25.8% in 100-V HV-LED. Moreover, smaller microchips exhibited lower series resistance and forward voltage, leading to higher wall-plug efficiency.
URI:	http://dx.doi.org/10.1109/LED.2011.2153176 http://hdl.handle.net/11536/20871
ISSN:	0741-3106
DOI:	10.1109/LED.2011.2153176
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	32
Issue:	8
起始頁:	1098
結束頁:	1100
Appears in Collections:	Articles

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