完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Sze, S. M. | en_US |
dc.date.accessioned | 2014-12-08T15:28:55Z | - |
dc.date.available | 2014-12-08T15:28:55Z | - |
dc.date.issued | 2012-10-01 | en_US |
dc.identifier.issn | 1533-4880 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1166/jnn.2012.6648 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/20890 | - |
dc.description.abstract | In the past 45 years (from 1967 to 2012), the non-volatile semiconductor memory (NVSM) has emerged from a floating-gate concept to the prime technology driver of the largest industry in the world-the electronics industry. In this paper, we briefly review the historical development of NVSM and project its future trends to the year 2020. In addition, we consider NVSM's wide-range of applications from the digital cellular phone to tablet computer to digital television. As the device dimension is scaled down to the deca-nanometer regime, we expect that many innovations will be made to meet the scaling challenges, and NVSM-inspired technology will continue to enrich and improve our lives for decades to come. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | Semiconductor Memory | en_US |
dc.title | The Floating-Gate Non-Volatile Semiconductor Memory-From Invention to the Digital Age | en_US |
dc.type | Review | en_US |
dc.identifier.doi | 10.1166/jnn.2012.6648 | en_US |
dc.identifier.journal | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | en_US |
dc.citation.volume | 12 | en_US |
dc.citation.issue | 10 | en_US |
dc.citation.spage | 7587 | en_US |
dc.citation.epage | 7596 | en_US |
dc.contributor.department | 交大名義發表 | zh_TW |
dc.contributor.department | National Chiao Tung University | en_US |
dc.identifier.wosnumber | WOS:000312620200001 | - |
dc.citation.woscount | 7 | - |
顯示於類別: | 期刊論文 |