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dc.contributor.authorSze, S. M.en_US
dc.date.accessioned2014-12-08T15:28:55Z-
dc.date.available2014-12-08T15:28:55Z-
dc.date.issued2012-10-01en_US
dc.identifier.issn1533-4880en_US
dc.identifier.urihttp://dx.doi.org/10.1166/jnn.2012.6648en_US
dc.identifier.urihttp://hdl.handle.net/11536/20890-
dc.description.abstractIn the past 45 years (from 1967 to 2012), the non-volatile semiconductor memory (NVSM) has emerged from a floating-gate concept to the prime technology driver of the largest industry in the world-the electronics industry. In this paper, we briefly review the historical development of NVSM and project its future trends to the year 2020. In addition, we consider NVSM's wide-range of applications from the digital cellular phone to tablet computer to digital television. As the device dimension is scaled down to the deca-nanometer regime, we expect that many innovations will be made to meet the scaling challenges, and NVSM-inspired technology will continue to enrich and improve our lives for decades to come.en_US
dc.language.isoen_USen_US
dc.subjectSemiconductor Memoryen_US
dc.titleThe Floating-Gate Non-Volatile Semiconductor Memory-From Invention to the Digital Ageen_US
dc.typeReviewen_US
dc.identifier.doi10.1166/jnn.2012.6648en_US
dc.identifier.journalJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGYen_US
dc.citation.volume12en_US
dc.citation.issue10en_US
dc.citation.spage7587en_US
dc.citation.epage7596en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.identifier.wosnumberWOS:000312620200001-
dc.citation.woscount7-
顯示於類別:期刊論文