1. 目前位置：

完整後設資料紀錄
DC 欄位值語言
dc.contributor.authorLu, Cheng-Hsienen_US
dc.contributor.authorCheng, Chuan-Anen_US
dc.contributor.authorHo, Chia-Huaen_US
dc.contributor.authorChen, Kuan-Nengen_US
dc.date.accessioned2014-12-08T15:28:55Z-
dc.date.available2014-12-08T15:28:55Z-
dc.date.issued2012-10-01en_US
dc.identifier.issn1533-4880en_US
dc.identifier.urihttp://dx.doi.org/10.1166/jnn.2012.6602en_US
dc.identifier.urihttp://hdl.handle.net/11536/20891-
dc.description.abstractThis research is to investigate the effects of bonding technology and thinning process on the electrical properties of 0.35 mu m technology node n-MOSFET devices. After the bonding process, by changing the bonding temperature up to 400 degrees C and bonding force up to 2.5 x 10(5) Pa, these devices still have the same electrical performances. In addition, thinning process was applied to investigate the stress which would affect the electrical properties of n-MOSFETs. The electrical performances of devices do not change for substrate thickness larger than 466 mu m.en_US
dc.language.isoen_USen_US
dc.subjectn-MOSFET Devicesen_US
dc.subjectIntegrationen_US
dc.subjectBonding Technologyen_US
dc.subjectThinning Processen_US
dc.titleEffects of Bonding Technology and Thinning Process in Three-Dimensional Integration on Device Characteristicsen_US
dc.typeArticleen_US
dc.identifier.doi10.1166/jnn.2012.6602en_US
dc.identifier.journalJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGYen_US
dc.citation.volume12en_US
dc.citation.issue10en_US
dc.citation.spage8050en_US
dc.citation.epage8054en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000312620200058-
dc.citation.woscount1-
顯示於類別：期刊論文


相關內容
Loading...