完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chang, Yuan-Ming | en_US |
dc.contributor.author | Lin, Man-Ling | en_US |
dc.contributor.author | Lai, Tung-Yen | en_US |
dc.contributor.author | Lee, Hsin-Yi | en_US |
dc.contributor.author | Lin, Chih-Ming | en_US |
dc.contributor.author | Wu, Yew-Chung Sermon | en_US |
dc.contributor.author | Juang, Jenh-Yih | en_US |
dc.date.accessioned | 2014-12-08T15:29:01Z | - |
dc.date.available | 2014-12-08T15:29:01Z | - |
dc.date.issued | 2012-12-01 | en_US |
dc.identifier.issn | 1944-8244 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1021/am301848a | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/20923 | - |
dc.description.abstract | The structural and optoelectronic properties of ZnO nanopillars (ZnO-NPs) grown on Si substrates by the vapor transport deposition method were investigated. In particular, by varying the deposition duration and hence the morphology of the vertically aligned ZnO-NPs, the resultant field emission characteristics were systematically compared. In addition to identifying the advantageous field emission properties exhibited in the pencil-like ZnO-NPs, we observed that by adhering Au nanoparticles on the surface of the ZnO-NPs the turn-on field and the maximum current density can be drastically improved from 3.15 V/mu m and 0.44 mA/cm(2) at 5 V/mu m for the best ZnO-NPs to 2.65 V/mu m and 2.11 mA/cm(2) at 5 V/mu m for Au/ZnO-NPs, respectively. The enhancement of field emission characteristics that resulted from Au-nanoparticle decoration is discussed on the basis of charge-transfer-induced band structure modifications. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | ZnO nanopillars | en_US |
dc.subject | vapor transport deposition | en_US |
dc.subject | Au nanoparticles | en_US |
dc.subject | field emission | en_US |
dc.subject | turn-on field | en_US |
dc.subject | current density | en_US |
dc.title | Field Emission Properties of Gold Nanoparticle-Decorated ZnO Nanopillars | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1021/am301848a | en_US |
dc.identifier.journal | ACS APPLIED MATERIALS & INTERFACES | en_US |
dc.citation.volume | 4 | en_US |
dc.citation.issue | 12 | en_US |
dc.citation.spage | 6675 | en_US |
dc.citation.epage | 6681 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | 電子物理學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.contributor.department | Department of Electrophysics | en_US |
dc.identifier.wosnumber | WOS:000313149800039 | - |
dc.citation.woscount | 12 | - |
顯示於類別: | 期刊論文 |