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dc.contributor.authorChang, Yuan-Mingen_US
dc.contributor.authorLin, Man-Lingen_US
dc.contributor.authorLai, Tung-Yenen_US
dc.contributor.authorLee, Hsin-Yien_US
dc.contributor.authorLin, Chih-Mingen_US
dc.contributor.authorWu, Yew-Chung Sermonen_US
dc.contributor.authorJuang, Jenh-Yihen_US
dc.date.accessioned2014-12-08T15:29:01Z-
dc.date.available2014-12-08T15:29:01Z-
dc.date.issued2012-12-01en_US
dc.identifier.issn1944-8244en_US
dc.identifier.urihttp://dx.doi.org/10.1021/am301848aen_US
dc.identifier.urihttp://hdl.handle.net/11536/20923-
dc.description.abstractThe structural and optoelectronic properties of ZnO nanopillars (ZnO-NPs) grown on Si substrates by the vapor transport deposition method were investigated. In particular, by varying the deposition duration and hence the morphology of the vertically aligned ZnO-NPs, the resultant field emission characteristics were systematically compared. In addition to identifying the advantageous field emission properties exhibited in the pencil-like ZnO-NPs, we observed that by adhering Au nanoparticles on the surface of the ZnO-NPs the turn-on field and the maximum current density can be drastically improved from 3.15 V/mu m and 0.44 mA/cm(2) at 5 V/mu m for the best ZnO-NPs to 2.65 V/mu m and 2.11 mA/cm(2) at 5 V/mu m for Au/ZnO-NPs, respectively. The enhancement of field emission characteristics that resulted from Au-nanoparticle decoration is discussed on the basis of charge-transfer-induced band structure modifications.en_US
dc.language.isoen_USen_US
dc.subjectZnO nanopillarsen_US
dc.subjectvapor transport depositionen_US
dc.subjectAu nanoparticlesen_US
dc.subjectfield emissionen_US
dc.subjectturn-on fielden_US
dc.subjectcurrent densityen_US
dc.titleField Emission Properties of Gold Nanoparticle-Decorated ZnO Nanopillarsen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/am301848aen_US
dc.identifier.journalACS APPLIED MATERIALS & INTERFACESen_US
dc.citation.volume4en_US
dc.citation.issue12en_US
dc.citation.spage6675en_US
dc.citation.epage6681en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000313149800039-
dc.citation.woscount12-
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