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dc.contributor.authorChen, Tzu-Yinen_US
dc.contributor.authorPhan Thi Kim Loanen_US
dc.contributor.authorHsu, Chang-Lungen_US
dc.contributor.authorLee, Yi-Hsienen_US
dc.contributor.authorWang, Jacob Tse-Weien_US
dc.contributor.authorWei, Kung-Hwaen_US
dc.contributor.authorLin, Cheng-Teen_US
dc.contributor.authorLi, Lain-Jongen_US
dc.date.accessioned2014-12-08T15:29:06Z-
dc.date.available2014-12-08T15:29:06Z-
dc.date.issued2013-03-15en_US
dc.identifier.issn0956-5663en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.bios.2012.07.059en_US
dc.identifier.urihttp://hdl.handle.net/11536/20999-
dc.description.abstractThe high transconductance and low noise of graphene-based field-effect transistors based on large-area monolayer graphene produced by chemical vapor deposition are used for label-free electrical detection of DNA hybridization. The gate materials, buffer concentration and surface condition of graphene have been optimized to achieve the DNA detection sensitivity as low as 1 pM (10(-12) M), which is more sensitive than the existing report based on few-layer graphene. The graphene films obtained using conventional PMMA-assisted transfer technique exhibits PMMA residues, which degrade the sensing performance of graphene. We have demonstrated that the sensing performance of the graphene samples prepared by gold-transfer is largely enhanced (by 125%). (C) 2012 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectLabel-free detectionen_US
dc.subjectLiquid-gated transistorsen_US
dc.subjectDNA sensingen_US
dc.subjectCVD grapheneen_US
dc.subjectGold-transfer methoden_US
dc.titleLabel-free detection of DNA hybridization using transistors based on CVD grown grapheneen_US
dc.typeArticleen_US
dc.identifier.doi10.1016/j.bios.2012.07.059en_US
dc.identifier.journalBIOSENSORS & BIOELECTRONICSen_US
dc.citation.volume41en_US
dc.citation.issueen_US
dc.citation.spage103en_US
dc.citation.epage109en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000314191300012-
dc.citation.woscount29-
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