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dc.contributor.authorHsu, Yao-Janeen_US
dc.contributor.authorLai, Yu-Lingen_US
dc.contributor.authorChen, Chih-Hanen_US
dc.contributor.authorLin, Ying-Changen_US
dc.contributor.authorChien, Hsiu-Yunen_US
dc.contributor.authorWang, Jeng-Hanen_US
dc.contributor.authorLam, Tu-Ngocen_US
dc.contributor.authorChan, Yuet-Loyen_US
dc.contributor.authorWei, D. H.en_US
dc.contributor.authorLin, Hong-Jien_US
dc.contributor.authorChen, Chien-Teen_US
dc.date.accessioned2014-12-08T15:29:12Z-
dc.date.available2014-12-08T15:29:12Z-
dc.date.issued2013-01-17en_US
dc.identifier.issn1948-7185en_US
dc.identifier.urihttp://dx.doi.org/10.1021/jz301757xen_US
dc.identifier.urihttp://hdl.handle.net/11536/21039-
dc.description.abstractTo realize the origin of efficient spin injection at organic-ferromagnetic contact in organic spintronics, we have implemented the formation of quasi-molecular magnet via surface restructuring of a strong organic acceptor, tetrafluoro-tetracyanoquinodimethane (F4-TCNQ), in contact with ferromagnetic cobalt. Our results demonstrate a spin-polarized F4-TCNQ layer and a remarkably enhanced magnetic anisotropy of the Co film. The novel magnetic properties are contributed from strong magnetic coupling caused by the molecular restructuring that displays an angular anchoring conformation of CN and upwardly protruding fluorine atoms. We conclude that the pi bonds of CN, instead of the lone-pair electrons of N atoms, contribute to the hybridization-induced magnetic coupling between CN and Co and generate a superior magnetic order on the surface.en_US
dc.language.isoen_USen_US
dc.titleEnhanced Magnetic Anisotropy via Quasi-Molecular Magnet at Organic-Ferromagnetic Contacten_US
dc.typeArticleen_US
dc.identifier.doi10.1021/jz301757xen_US
dc.identifier.journalJOURNAL OF PHYSICAL CHEMISTRY LETTERSen_US
dc.citation.volume4en_US
dc.citation.issue2en_US
dc.citation.spage310en_US
dc.citation.epage316en_US
dc.contributor.department材料科學與工程學系奈米科技碩博班zh_TW
dc.contributor.departmentGraduate Program of Nanotechnology , Department of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000313933300014-
dc.citation.woscount6-
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