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| The resistive switching characteristics in TaON films for nonvolatile memory applications | 107 |
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| The resistive switching characteristics in TaON films for nonvolatile memory applications | 107 |
| 檢視 | |
|---|---|
| 000314115800038.pdf | 4 |
| 檢視 | |
|---|---|
| 中國 | 98 |
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|---|---|
| Shenzhen | 97 |
| Menlo Park | 6 |
| Kensington | 2 |
| Beijing | 1 |
| Edmond | 1 |