EFFECT OF SIH4/CH4 FLOW RATIO ON THE GROWTH OF BETA-SIC ON SI BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION AT 500-DEGREES-C

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	LIU, CC	en_US
dc.contributor.author	LEE, CY	en_US
dc.contributor.author	CHENG, KL	en_US
dc.contributor.author	CHENG, HC	en_US
dc.contributor.author	YEW, TR	en_US
dc.date.accessioned	2014-12-08T15:03:34Z	-
dc.date.available	2014-12-08T15:03:34Z	-
dc.date.issued	1995-01-09	en_US
dc.identifier.issn	0003-6951	en_US
dc.identifier.uri	http://dx.doi.org/10.1063/1.113552	en_US
dc.identifier.uri	http://hdl.handle.net/11536/2104	-
dc.language.iso	en_US	en_US
dc.title	EFFECT OF SIH4/CH4 FLOW RATIO ON THE GROWTH OF BETA-SIC ON SI BY ELECTRON-CYCLOTRON-RESONANCE CHEMICAL-VAPOR-DEPOSITION AT 500-DEGREES-C	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1063/1.113552	en_US
dc.identifier.journal	APPLIED PHYSICS LETTERS	en_US
dc.citation.volume	66	en_US
dc.citation.issue	2	en_US
dc.citation.spage	168	en_US
dc.citation.epage	170	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1995QA69800019	-
dc.citation.woscount	33	-
顯示於類別：	期刊論文