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| Investigation of extra traps measured by charge pumping technique in high voltage zone in p-channel metal-oxide-semiconductor field-effect transistors with HfO2/metal gate stacks | 110 |
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| Investigation of extra traps measured by charge pumping technique in high voltage zone in p-channel metal-oxide-semiconductor field-effect transistors with HfO2/metal gate stacks | 0 | 0 | 0 | 0 | 0 | 0 | 2 |
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| 000313646500064.pdf | 12 |
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