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dc.contributor.authorLin, Chi-Yuanen_US
dc.contributor.authorChang, Chen-Shiungen_US
dc.contributor.authorLin, Jian Hungen_US
dc.contributor.authorHsu, Chia-Chenen_US
dc.contributor.authorChien, Forest Shih-Senen_US
dc.date.accessioned2014-12-08T15:29:13Z-
dc.date.available2014-12-08T15:29:13Z-
dc.date.issued2013-01-07en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.4773984en_US
dc.identifier.urihttp://hdl.handle.net/11536/21054-
dc.description.abstractWe demonstrated optical-controlled graphene-based nonvolatile transistors incorporated with azobenzene copolymer. The transistor was gated by the quasi remnant polarization of azobenzene copolymer, which was built by photo-assisted poling and erased by photo-depoling at room temperature. By taking the nature of polymer electret of azobenzene copolymer, the graphene-based device can perform ternary logic, and the resistance change ratio of the written status "+/- 1" to the erased status "0" was -/+ 60%. The device can retain its statuses against an electric field as high as 0.2 MV/cm because the azobenzene molecules were frozen in copolymer at room temperature. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4773984]en_US
dc.language.isoen_USen_US
dc.titleOptical controlled graphene-based nonvolatile ternary-logic transistor with azobenzene copolymeren_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.4773984en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume102en_US
dc.citation.issue1en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000313646500127-
dc.citation.woscount0-
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