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dc.contributor.authorWu, Chi-Changen_US
dc.contributor.authorTsai, Yi-Jenen_US
dc.contributor.authorLiu, Pin-Linen_US
dc.contributor.authorYang, Wen-Luhen_US
dc.contributor.authorKo, Fu-Hsiangen_US
dc.date.accessioned2014-12-08T15:29:14Z-
dc.date.available2014-12-08T15:29:14Z-
dc.date.issued2013-01-01en_US
dc.identifier.issn0957-4522en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s10854-012-0773-yen_US
dc.identifier.urihttp://hdl.handle.net/11536/21079-
dc.description.abstractA promising charge trapping film with crystal embedded material is proposed for future electronic devices. Instead of conventional high-vacuum and expensive tool, this technique adopts very cheaper process of sol-gel spin-coating for fabrication of thin film material in the charge trapping flash memory (CTFM). The crystal from spinodal phase separation is observed for sol-gel thin film at 900 degrees C annealing, and is strongly related to the thickness of the spin-coated thin film. The morphology of the crystal from the ethanol solvent system is in the isolated form, while from 2-propanol solvent is in the interconnected structure. The sol-gel-derived CTFM from ethanol exhibits the better memory performance of retention times for <5 and <10 % charge loss at applied temperature of 25 and 85 degrees C, respectively. The ethanol system CTFM demonstrates a large memory window (similar to 10 V) and good reliability than 2-propanol (similar to 3 V) due to the existence of several isolated crystals in silicon dioxide film.en_US
dc.language.isoen_USen_US
dc.titleFacile sol-gel preparation of nanocrystal embedded thin film material for memory deviceen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s10854-012-0773-yen_US
dc.identifier.journalJOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICSen_US
dc.citation.volume24en_US
dc.citation.issue1en_US
dc.citation.spage423en_US
dc.citation.epage430en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000313799400060-
dc.citation.woscount2-
Appears in Collections:Articles


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