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dc.contributor.authorLuo, Tseng-Chinen_US
dc.contributor.authorChao, Mango C. -T.en_US
dc.contributor.authorFisher, Philip A.en_US
dc.contributor.authorKuo, Chun-Renen_US
dc.date.accessioned2014-12-08T15:29:20Z-
dc.date.available2014-12-08T15:29:20Z-
dc.date.issued2012-08-01en_US
dc.identifier.issn0894-6507en_US
dc.identifier.urihttp://dx.doi.org/10.1109/TSM.2012.2190431en_US
dc.identifier.urihttp://hdl.handle.net/11536/21120-
dc.description.abstractDummy fill has been demonstrated to be an effective technique to reduce process variation and improve manufacturability for advanced integrated circuit (IC) designs. However, the computation load, often several days for a realistic IC design, is a significant portion of the cycle time for delivering first silicon on new or modified designs. In this paper, we propose a novel design flow and dummy-fill algorithm based on Boolean operations, which greatly improves computational efficiency and pattern density uniformity, and enables dummy generation to be combined with the mask-preparation Boolean operations performed by the mask-fabrication facility. Mask data preparation can be performed in parallel with dummy generation and post-dummy simulation checks at the design house, resulting in improved first-silicon cycle time. Experimental results demonstrate these benefits in the context of an advanced foundry process technology.en_US
dc.language.isoen_USen_US
dc.subjectBoolean operationen_US
dc.subjectdummy fillen_US
dc.titleA Novel Design Flow for Dummy Fill Using Boolean Mask Operationsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1109/TSM.2012.2190431en_US
dc.identifier.journalIEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURINGen_US
dc.citation.volume25en_US
dc.citation.issue3en_US
dc.citation.spage468en_US
dc.citation.epage479en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000314401300020-
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